Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

All prior reports of long-term 500 °C operation SiC JFET-R ICs have noted the existence an initial “burn-in” period changes in measured electrical characteristics for first few hundred hours oven-testing. This work measurements “burn-in parasitic MOSFET conduction” that can substantially impact performance some circuits during heat-up JFET ICs, but then subsequently disappears after a at °C. The behavior appears generally consistent with known MOS phenomenon bias-temperature driven redistribution mobile ionic contamination. Approaches further mitigating this burn-in conduction mechanism are discussed.